H-assisted plasma CVD of Cu films for interconnects in ultra-large-scale integration
نویسندگان
چکیده
منابع مشابه
Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects
Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theore...
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Today, the price of building a factory to produce submicron size electronic devices on 300 mm Si wafers is over billions of dollars. In processing a 300 mm Si wafer, over half of the production cost comes from fabricating the very-large-scale-integration of the interconnect metallization. The most serious and persistent reliability problem in interconnect metallization is electromigration. In t...
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ژورنال
عنوان ژورنال: Science and Technology of Advanced Materials
سال: 2001
ISSN: 1468-6996,1878-5514
DOI: 10.1016/s1468-6996(01)00131-0